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High-efficiency four-junction GaAs solar cells suitable for use in spacecraft such as satellites.
A four-junction GaAs solar cell that can be used in spacecraft such as artificial satellites. It has improved conversion efficiency compared to the three-junction GaAs solar cells commonly used in many conventional satellites.
GaAs solar cells using InGaP/GaInAs/Ge on Ge substrate.
The "Concentrator Type 3-Junction GaAs Solar Cell (3C44C 10mm)" has an effective cell area of 10mm × 10mm = 100mm². The substrate material is InGaP/GaInAs/Ge on a Ge substrate, with dimensions of 10.1 × 10.5mm ± 0.1mm. The cell thickness is 190 ± 20μm. Additionally, the bonding methods include welding, soldering, and adhesive bonding. 【Design and Mechanical Characteristics (Excerpt)】 ■ Substrate Material: InGaP/GaInAs/Ge on Ge substrate ■ AR Coating: TiOx/Al2Ox ■ Dimensions: 10.1 × 10.5mm ± 0.1mm ■ Effective Cell Area: 10mm × 10mm = 100mm² ■ Cell Thickness: 190 ± 20μm *For more details, please refer to the PDF document or feel free to contact us.
Introduction of a 5.6×6.0mm±0.1mm concentrated type 3-junction GaAs solar cell!
The "Concentrator Type 3-Junction GaAs Solar Cell (3C44C 5.5mm)" has an effective cell area of 5.5mm × 5.5mm = 30.25mm². The substrate material is InGaP/GaInAs/Ge on a Ge substrate, with dimensions of 5.6 × 6.0mm ± 0.1mm. The cell thickness is 190 ± 20μm. Additionally, the bonding methods include welding, soldering, and adhesive bonding. 【Design and Mechanical Characteristics (Excerpt)】 ■ Substrate Material: InGaP/GaInAs/Ge on Ge substrate ■ AR Coating: TiOx/Al2Ox ■ Dimensions: 5.6 × 6.0mm ± 0.1mm ■ Effective Cell Area: 5.5mm × 5.5mm = 30.25mm² ■ Cell Thickness: 190 ± 20μm *For more details, please refer to the PDF document or feel free to contact us.
